JPS6352465B2 - - Google Patents
Info
- Publication number
- JPS6352465B2 JPS6352465B2 JP54103166A JP10316679A JPS6352465B2 JP S6352465 B2 JPS6352465 B2 JP S6352465B2 JP 54103166 A JP54103166 A JP 54103166A JP 10316679 A JP10316679 A JP 10316679A JP S6352465 B2 JPS6352465 B2 JP S6352465B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- conductivity type
- type semiconductor
- opposite conductivity
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316679A JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316679A JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5627942A JPS5627942A (en) | 1981-03-18 |
| JPS6352465B2 true JPS6352465B2 (en]) | 1988-10-19 |
Family
ID=14346915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10316679A Granted JPS5627942A (en) | 1979-08-15 | 1979-08-15 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5627942A (en]) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6178137A (ja) * | 1984-09-26 | 1986-04-21 | Oki Electric Ind Co Ltd | 半導体装置 |
| JPS62173758A (ja) * | 1986-01-27 | 1987-07-30 | Nec Corp | 半導体集積回路装置 |
| NL8701251A (nl) * | 1987-05-26 | 1988-12-16 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
| JP2514251B2 (ja) * | 1989-06-24 | 1996-07-10 | 松下電工株式会社 | 半導体装置 |
| US5557125A (en) * | 1993-12-08 | 1996-09-17 | Lucent Technologies Inc. | Dielectrically isolated semiconductor devices having improved characteristics |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS523862Y2 (en]) * | 1973-07-09 | 1977-01-27 | ||
| JPS5117682A (ja) * | 1974-08-05 | 1976-02-12 | Hitachi Ltd | Handotaisochi |
-
1979
- 1979-08-15 JP JP10316679A patent/JPS5627942A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5627942A (en) | 1981-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4546536A (en) | Fabrication methods for high performance lateral bipolar transistors | |
| EP0001300B1 (en) | Method of manufacturing a locos semiconductor device | |
| JP3818673B2 (ja) | 半導体装置 | |
| US4051506A (en) | Complementary semiconductor device | |
| US4323913A (en) | Integrated semiconductor circuit arrangement | |
| US4903109A (en) | Semiconductor devices having local oxide isolation | |
| US4320411A (en) | Integrated circuit with double dielectric isolation walls | |
| EP0233202A1 (en) | MANUFACTURE OF A SEMICONDUCTOR DEVICE WITH BURIAL OXIDE. | |
| JPH0241170B2 (en]) | ||
| JPH11243200A (ja) | 半導体装置 | |
| JPS6352465B2 (en]) | ||
| US5536966A (en) | Retrograde NWell cathode Schottky transistor and fabrication process | |
| EP0036620B1 (en) | Semiconductor device and method for fabricating the same | |
| JP2760401B2 (ja) | 誘電体分離基板及び半導体装置 | |
| JPH10335630A (ja) | 半導体装置及びその製造方法 | |
| JP3150420B2 (ja) | バイポーラ集積回路とその製造方法 | |
| JP3334168B2 (ja) | 半導体集積回路装置の製造方法 | |
| JP2024046362A (ja) | 半導体装置 | |
| JPS61269373A (ja) | 半導体装置 | |
| JPH0157506B2 (en]) | ||
| JPH0697275A (ja) | 半導体装置 | |
| JPS59217338A (ja) | 半導体装置 | |
| JPH02308540A (ja) | 半導体装置の製造方法 | |
| JPS6135704B2 (en]) | ||
| JPS6118867B2 (en]) |